Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/75862
Type: Artigo de periódico
Title: A GENERAL-MODEL FOR MOTION BOUND TO AN IMPURITY IN AN ANISOTROPIC SEMICONDUCTOR
Author: CASASAYAS, J
NUNES, A
DEALMEIDA, AMO
Abstract: The one-electron Hamiltonian for motion bound to an impurity in an anisotropic semiconductor can be crudely approximated by the anisotropic Kepler model. We have established that the chaos found in the underlying classical motion is insensitive to variations of the potential required by more realistic models, and that the qualitative behaviour of the chaotic orbits gives information on the degree of the dominant term of the potential near the singularity.
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/0167-2789(91)90090-V
Date Issue: 1991
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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