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Type: Artigo de periódico
Title: A fractional-dimensional space approach to the study of shallow-donor states in symmetric-coupled GaAs-Ga1-xAlxAs multiple quantum wells
Author: Matos-Abiague, A
Oliveira, LE
de Dios-Leyva, M
Abstract: The fractional-dimensional space approach is extended to study shallow-donor states in symmetric-coupled GaAs-Ga1 - xAlx As multiple quantum wells. In this scheme. the real anisotropic 'shallow donor + multiple quantum well' semiconductor system is mapped for each shallow-donor state, into an effective fractional-dimensional isotropic environment, and the fractional dimension is essentially related to the anisotropy of the actual semiconductor system. Calculations within the fractional-dimensional space scheme were performed for the binding energies of Is-like shallow-donor states in various positions in symmetric-coupled double and triple GaAs-Ga1 - xAlxAs semiconductor quantum a wells, and for varying well and barrier thicknesses. Fractional-dimensional theoretical results an shown to be in good agreement with previous variational theoretical calculations. (C) 2001 Elsevier Science B.V. All rights reserved.
Subject: shallow-donor states
fractional-dimensional approach
multiple quantum wells
Country: Holanda
Editor: Elsevier Science Bv
Citation: Physica B. Elsevier Science Bv, v. 296, n. 4, n. 342, n. 350, 2001.
Rights: fechado
Identifier DOI: 10.1016/S0921-4526(00)00577-9
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

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