Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/75735
Type: Artigo de periódico
Title: Role of X valley on the dynamics of electron transport through a GaAs/AlAs double-barrier structure
Author: Galeti, HVA
de Carvalho, HB
Brasil, MJSP
Gobato, Y
Lopez-Richard, V
Marques, GE
Henini, M
Hill, G
Abstract: The transport of electrons through a GaAs/AlAs double-barrier structure with p-type doped contacts was investigated using time-resolved photoluminescence spectroscopy. Under illumination, the current-voltage characteristics of the device present two additional features attributed, respectively, to resonant Gamma-Gamma and Gamma-X electron tunneling. Optical measurements for biases where these two alternative transport mechanisms have competitive probabilities revealed an unusual carrier dynamics. The quantum well emission is strongly delayed and we observe a remarkable nonlinear effect where the emission intensity decreases at the arrival of a laser pulse. We propose a simple model that adequately describes our results where we assume that the indirect-transition rate depends on the density of electrons accumulated along the structure.
Country: EUA
Editor: Amer Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.78.165309
Date Issue: 2008
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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