Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Shallow donor states in GaAs-(Ga,Al)As quantum dots with different potential shapes
Author: Betancur, FJ
Mikhailov, ID
Oliveira, LE
Abstract: Energies of the ground and some excited states of on-centre donors (D-O) in GaAs/Ga1-xAlxAs spherical quantum dots are calculated, within the effective mass approximation, as functions of the R dot radius and for different potential shapes. We propose an exact numerical solution for the radial Schrodinger equation in a quantum dot with any arbitrary spherical potential by using a trigonometric sweep method. An evident increase in the binding energy is found as the soft-edge-barrier potential model is considered. It is found that the D-O binding energy increases as the dot size decreases up to a dot radius critical value R = R-c and then, for R slightly smaller than R-c, the impurity wave function spreads to the barrier region and the 3D character is rapidly restored. The properties of the D-O shallow donors in a quantum dot with a double-step potential barrier and multiple barriers are analysed, and two peaks in the binding energy are found. Our results for the spherical-rectangular potential are in good agreement with previous calculations obtained using other methods.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0022-3727/31/23/013
Date Issue: 1998
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

Files in This Item:
File Description SizeFormat 
WOS000077552800013.pdf522.82 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.