Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Silicon nitride etching in high- and low-density plasmas using SF(6)/O(2)/N(2) mixtures
Author: Reyes-Betanzo, C
Moshkalyov, SA
Swart, JW
Ramos, ACS
Abstract: Results of a comparative study of SiN(x) SiO(2) and Si etching in high- and low-density O(2)-N(2) based plasmas with small additions of SF(6) are presented. Higher selectivities of SiN(x) etching over both SiO(2) (up to 50-70) and Si (up to 20) are obtained in a high-density reactor as compared with low-density reactive ion etching. Plasma and surface processes responsible for etching are analyzed. Kinetics of NO molecules responsible for enhanced nitride etching is shown to be distinctly different for low- and high-density plasma conditions. Possible ways of further optimization of the process are discussed. (C) 2003 American Vacuum Society.
Country: EUA
Editor: A V S Amer Inst Physics
Citation: Journal Of Vacuum Science & Technology A. A V S Amer Inst Physics, v. 21, n. 2, n. 461, n. 469, 2003.
Rights: aberto
Identifier DOI: 10.1116/1.1547703
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.