Please use this identifier to cite or link to this item:
|Type:||Artigo de periódico|
|Title:||Silicon nitride etching in high- and low-density plasmas using SF(6)/O(2)/N(2) mixtures|
|Abstract:||Results of a comparative study of SiN(x) SiO(2) and Si etching in high- and low-density O(2)-N(2) based plasmas with small additions of SF(6) are presented. Higher selectivities of SiN(x) etching over both SiO(2) (up to 50-70) and Si (up to 20) are obtained in a high-density reactor as compared with low-density reactive ion etching. Plasma and surface processes responsible for etching are analyzed. Kinetics of NO molecules responsible for enhanced nitride etching is shown to be distinctly different for low- and high-density plasma conditions. Possible ways of further optimization of the process are discussed. (C) 2003 American Vacuum Society.|
|Editor:||A V S Amer Inst Physics|
|Citation:||Journal Of Vacuum Science & Technology A. A V S Amer Inst Physics, v. 21, n. 2, n. 461, n. 469, 2003.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
Files in This Item:
There are no files associated with this item.
Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.