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Type: Artigo de periódico
Title: Shorter wavelength emission with InAs quantum dots growth directly on large bandgap quaternary (In0.68Ga0.32As0.7P0.3) barriers for high current injection efficiency
Author: Mialichi, JR
Frateschi, NC
Abstract: We present the growth of stacked layers of InAs quantum dots directly on high bandgap In0.68Ga0.32As0.7P0.3 (lambda(g) = 1420 nm) barriers. The quaternary material is lattice matched to InP forming a double hetero-structure. Indium flux, number of InAs stacked layers and InGaAsP inner separation layer thickness were investigated. Photoluminescence (PL) and atomic force microscopy (AFM) analysis indicate the occurrence of gallium diffusion and the arsenic/phosphorus (As/P) exchange with the InGaAsP barriers. As a result, shorter wavelength emission is observed, making the structures suitable for telecom applications. (C) 2010 Elsevier B.V. All rights reserved.
Subject: Atomic force microscopy
Computer simulation
Chemical beam epitaxy
Semiconducting III-V materials
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/j.jcrysgro.2010.04.044
Date Issue: 2010
Appears in Collections:Unicamp - Artigos e Outros Documentos

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