Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/75480
Type: Artigo de periódico
Title: Structural properties and Raman modes of zinc blende InN epitaxial layers
Author: Tabata, A
Lima, AP
Teles, LK
Scolfaro, LMR
Leite, JR
Lemos, V
Schottker, B
Frey, T
Schikora, D
Lischka, K
Abstract: We report on x-ray diffraction and micro-Raman scattering studies on zinc blende InN epitaxial films. The samples were grown by molecular beam epitaxy on GaAs(001) substrates using a InAs layer as a buffer. The transverse-optical (TO) and longitudinal-optical phonon frequencies at Gamma of c-InN are determined and compared to the corresponding values for c-GaN. Ab initio self-consistent calculations are carried out for the c-InN c-GaN lattice parameters and TO phonon frequencies. A good agreement between theory and experiment is found. (C) 1999 American Institute of Physics. [S0005-6951(99)00503-3].
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.123072
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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