Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/75442
Type: Artigo de periódico
Title: Structural, optical and electrical properties of indium nitride polycrystalline films
Author: da Silva, MVS
David, DGF
Pepe, I
da Silva, AF
de Almeida, JS
Gazoto, AL
dos Santos, AO
Cardoso, LP
Meneses, EA
Graybill, DL
Mertes, KM
Abstract: The structural, optical and electrical properties of InN polycrystalline films on glass substrate are investigated by means of X-ray photoelectron spectroscopy, Raman scattering measurements, X-ray diffraction analysis, optical spectroscopy, and electrical measurements as a function of the inverse of temperature. The absorption edge for the films is most likely due to an impurity band formed by the presence of defects in the material. Such an impurity band, located at 1.6 eV extends itself to about 1.8 eV above the Fermi level, and it is attributed to nitrogen vacancies present in the material. The Raman scattering data also reveal the incorporation of oxygen in the InN films, leading to the formation of the In2O3 amorphous phase during the process of sputtering. Additionally, the X-ray photoelectron spectroscopy of the valence band, which is highly desirable to the determination of the Fermi level, confirms the optical gap energy. Furthermore, the X-ray diffraction patterns of the thinner films present broader peaks, indicating high values for the strain between the film lattice and the glass substrate. Finally, first principles calculations are used to investigate the optical properties of InN and also to support the experimental findings. (c) 2012 Elsevier B.V. All rights reserved.
Subject: Indium nitride
Sputtering
Energy gap
Microstructure
Theoretical modeling
Country: Suíça
Editor: Elsevier Science Sa
Rights: fechado
Identifier DOI: 10.1016/j.tsf.2012.03.008
Date Issue: 2012
Appears in Collections:Unicamp - Artigos e Outros Documentos

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