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|Type:||Artigo de periódico|
|Title:||Study of structural changes in amorphous germanium-nitrogen alloys by optical techniques|
|Abstract:||Thin films of amorphous germanium-nitrogen (alpha-GeN) alloys prepared by the rf sputtering deposition technique have been studied by Raman scattering spectroscopy. The nitrogen content of the samples varies between zero and approximate to 3 x 10(22) atoms cm(-3), as determined from nuclear reaction analysis data. Modifications of the structural characteristics of the Ge-N alloys, probed through their phonon density, were investigated as a function of the nitrogen concentration. In addition to an increase of the network's topological disorder, nitrogen is responsible, at relatively high concentrations, for a structural transition in the alpha-Ge host. The optical and electronic characterization of the samples confirm these changes which are highly dependent on the nitrogen concentration. (C) 1996 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Citation:||Journal Of Applied Physics. Amer Inst Physics, v. 79, n. 1, n. 433, n. 438, 1996.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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