Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Study of roughness evolution and layer stacking faults in short-period atomic layer deposited HfO2/Al2O3 multilayers
Author: de Pauli, M
Malachias, A
Westfahl, H
Bettini, J
Ramirez, A
Huang, GS
Mei, YF
Schmidt, OG
Abstract: In this work we study the evolution of roughness in interfaces of HfO2/Al2O3 multilayers by x-ray reflectivity. It was found that, besides the reduced adatom surface mobility during atomic layer deposition, an improvement of the interface quality can be achieved upon the stacking of several layers. Although the low roughness of the initial surface could not be recovered, there was a considerable improvement of surface/interface quality along the deposition process. In particular, variations on the growth temperature were not able to tailor the surface quality, if compared to the stacking process. Finally, transmission electron microscopy analysis has shown that local defects can take place among nearly perfect interfaces. Such effect must be taken into account for nanometer-scale device fabrication. (C) 2011 American Institute of Physics. [doi:10.1063/1.3555624]
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.3555624
Date Issue: 2011
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

Files in This Item:
File Description SizeFormat 
WOS000289149900042.pdf2.75 MBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.