Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/75264
Type: Artigo de periódico
Title: Study of conditions for anisotropic plasma etching of tungsten and tungsten nitride using SF6/Ar gas mixtures
Author: Reyes-Betanzo, C
Moshkalyov, SA
Ramos, AC
Diniz, JA
Swart, JW
Abstract: Results of the study of reactive ion etching of tungsten, tungsten nitride, and silicon in SF6/Ar gas mixtures are presented. For plasma diagnostics, optical emission spectroscopy (actinometry) was used. Using the actinometry technique, it was possible to show that etching mechanisms were different for Si-F and W-F chemistries. Anisotropic etching of tungsten/tungsten nitride using conventional reactive ion etcher has been obtained, and conditions of achieving anisotropic etching have been analyzed. A correlation is found between anisotropy of tungsten etching and the ratio of Si/W etch rates. Mechanisms of fluorine redistribution between the bottom/sidewall surfaces due to surface diffusion and/or reflection are proposed as possible reasons for the observed correlation.
Country: EUA
Editor: Electrochemical Soc Inc
Rights: aberto
Identifier DOI: 10.1149/1.1446083
Date Issue: 2002
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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