Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/75193
Type: Artigo de periódico
Title: Stepped light-induced transient measurements of photocurrent and voltage in dye-sensitized solar cells based on ZnO and ZnO:Ga
Author: Goncalves, AD
Davolos, MR
Masaki, N
Yanagida, S
Mori, S
Nogueira, AF
Abstract: In order to explain the higher short-circuit current (J(sc)) with comparable open-circuit voltage (V-oc) from dye-sensitized solar cells (DSCs) based on gallium-modified ZnO (ZnO:Ga) porous electrodes, the diffusion coefficient (D) and electron lifetime (tau) in DSCs with and without Ga-modified ZnO were studied by stepped light-induced transient measurements of photocurrent and voltage. In comparison to DSCs based on ZnO electrodes, the ZnO:Ga-based solar cells provided lower D and higher tau values. The results were interpreted according to the transport-limited recombination model, where the Ga modification induced a higher density of intraband charge traps. At matched electron densities, a decrease in V-oc from DSCs based on ZnO:Ga was observed, suggesting a positive shift of the ZnO:Ga conduction band edge. The higher J(sc) can be explained by the positive shift of the ZnO:Ga conduction band edge in addition to the increased roughness factor of the electrode due to the Ga modification. (C) 2009 American Institute of Physics. [doi:10.1063/1.3226073]
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.3226073
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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