Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/75151
Type: Artigo de periódico
Title: Strain-dependent optical emission in In1-xGaxAs/InP quantum wells
Author: Tudury, HAP
Nakaema, MKK
Iikawa, R
Brum, JA
Ribeiro, E
Carvalho, W
Bernussi, AA
Gobbi, AL
Abstract: InGaAs/InP strained-layer modulation-doped quantum wells were studied by photoluminescence. The combination of the built-in strain and the quantum confinement in this system leads to a strong valence band mixing yielding direct and indirect band gap structures. We demonstrate that the optical emission line shape is strongly dependent on the valence band dispersion and it is a good method to distinguish between direct and indirect structures. The application of an external biaxial tensile strain to the samples provides an additional evidence of direct-to-indirect band gap transition in strained heterostructures.
Country: EUA
Editor: American Physical Soc
Rights: aberto
Date Issue: 2001
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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