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|Type:||Artigo de periódico|
|Title:||Strain-dependent optical emission in In1-xGaxAs/InP quantum wells|
|Abstract:||InGaAs/InP strained-layer modulation-doped quantum wells were studied by photoluminescence. The combination of the built-in strain and the quantum confinement in this system leads to a strong valence band mixing yielding direct and indirect band gap structures. We demonstrate that the optical emission line shape is strongly dependent on the valence band dispersion and it is a good method to distinguish between direct and indirect structures. The application of an external biaxial tensile strain to the samples provides an additional evidence of direct-to-indirect band gap transition in strained heterostructures.|
|Editor:||American Physical Soc|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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