Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/75147
Type: Artigo de periódico
Title: STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE
Author: INOKI, CK
LEMOS, V
CERDEIRA, F
VASQUEZLOPEZ, C
Abstract: A series of Raman and photoreflectance measurements was performed on several InxGa1-xAs/GaAs strained-layer superlattices of the same period but of different alloy compositions and substrate orientations. In the photoreflectance spectra the photon energy region containing the E1 and E1 + DELTA1 transitions of the GaAs barrier material is analyzed. Both types of measurements are used in order to estimate of the in-plane strain in these layers. The values obtained by both methods are in good mutual agreement, thus showing that photoreflectance is an effective method for strain determination.
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.352973
Date Issue: 1993
Appears in Collections:Unicamp - Artigos e Outros Documentos

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