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|Type:||Artigo de periódico|
|Title:||STRAIN DETERMINATION IN INXGA1-XAS/GAAS STRAINED-LAYER SUPERLATTICES BY PHOTOMODULATED REFLECTANCE|
|Abstract:||A series of Raman and photoreflectance measurements was performed on several InxGa1-xAs/GaAs strained-layer superlattices of the same period but of different alloy compositions and substrate orientations. In the photoreflectance spectra the photon energy region containing the E1 and E1 + DELTA1 transitions of the GaAs barrier material is analyzed. Both types of measurements are used in order to estimate of the in-plane strain in these layers. The values obtained by both methods are in good mutual agreement, thus showing that photoreflectance is an effective method for strain determination.|
|Editor:||Amer Inst Physics|
|Citation:||Journal Of Applied Physics. Amer Inst Physics, v. 73, n. 7, n. 3266, n. 3270, 1993.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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