Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/74511
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dc.contributor.CRUESPUNIVERSIDADE ESTADUAL DE CAMPINASpt_BR
dc.contributor.authorunicampAntonelli, Alexpt_BR
dc.typeArtigopt_BR
dc.titleStabilization of substitutional Mn in silicon-based semiconductorspt_BR
dc.contributor.authorSilva, Antônio J. R. dapt_BR
dc.contributor.authorFazzio, A.pt_BR
dc.contributor.authorAntonelli, Alexpt_BR
dc.subjectFerromagnetismopt_BR
dc.subjectSemicondutores magnéticospt_BR
dc.subjectGermâniopt_BR
dc.subject.otherlanguageFerromagnetismpt_BR
dc.subject.otherlanguageMagnetic semiconductorspt_BR
dc.subject.otherlanguageGermaniumpt_BR
dc.description.abstractWe systematically investigate, using ab initio density-functional theory calculations, the properties of interstitial and substitutional Mn in both Si and Ge, as well as in the Si1−xGex alloy. We show that volume effects are not the main reason Mn prefers to be a subsitutional impurity in pure Ge, and chemical effects, therefore, play an important role. Using realistic models of Si1−xGex, we show that for x≥0.16 substitutional Mn in Ge-rich neighborhoods become more stable than interstitial Mn, which may allow the growth of Si-based diluted magnetic semiconductors.pt
dc.description.abstractWe systematically investigate, using ab initio density-functional theory calculations, the properties of interstitial and substitutional Mn in both Si and Ge, as well as in the Si1−xGex alloy. We show that volume effects are not the main reason Mn prefers to be a subsitutional impurity in pure Ge, and chemical effects, therefore, play an important role. Using realistic models of Si1−xGex, we show that for x≥0.16 substitutional Mn in Ge-rich neighborhoods become more stable than interstitial Mn, which may allow the growth of Si-based diluted magnetic semiconductors.pt_BR
dc.relation.ispartofPhysical review. B, Condensed matter and materials physicspt_BR
dc.relation.ispartofabbreviationPhys. rev. Bpt_BR
dc.publisher.cityCollege Park, MDpt_BR
dc.publisher.countryEstados Unidospt_BR
dc.publisherAmerican Physical Societypt_BR
dc.date.issued2004pt_BR
dc.date.monthofcirculationNov.pt_BR
dc.identifier.citationPhysical Review B. American Physical Soc, v. 70, n. 19, 2004.pt_BR
dc.language.isoengpt_BR
dc.description.volume70pt_BR
dc.description.issuenumber19pt_BR
dc.description.firstpage1pt_BR
dc.description.lastpage4pt_BR
dc.rightsabertopt_BR
dc.sourceWOSpt_BR
dc.identifier.issn1098-0121pt_BR
dc.identifier.eissn1550-235Xpt_BR
dc.identifier.doi10.1103/PhysRevB.70.193205pt_BR
dc.identifier.urlhttps://journals.aps.org/prb/abstract/10.1103/PhysRevB.70.193205pt_BR
dc.description.sponsorshipFUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULO - FAPESPpt_BR
dc.description.sponsorshipCONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICO - CNPQpt_BR
dc.description.sponsorship1FAPESP - FUNDAÇÃO DE AMPARO À PESQUISA DO ESTADO DE SÃO PAULOpt_BR
dc.description.sponsorship1CNPQ - CONSELHO NACIONAL DE DESENVOLVIMENTO CIENTÍFICO E TECNOLÓGICOpt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.description.sponsordocumentnumberSem informaçãopt_BR
dc.date.available2014-11-14T05:33:47Z
dc.date.available2015-11-26T17:13:29Z-
dc.date.accessioned2014-11-14T05:33:47Z
dc.date.accessioned2015-11-26T17:13:29Z-
dc.description.provenanceMade available in DSpace on 2014-11-14T05:33:47Z (GMT). No. of bitstreams: 1 WOS000225477800012.pdf: 51003 bytes, checksum: e1b4339b4b264b236fee3c3e05b22fbc (MD5) Previous issue date: 2004 Bitstreams deleted on 2020-07-03T19:06:29Z: WOS000225477800012.pdf,. Added 1 bitstream(s) on 2020-07-03T19:12:15Z : No. of bitstreams: 2 000225477800012.pdf: 127601 bytes, checksum: 54d99461fae795724134a1bd37a2a41c (MD5) WOS000225477800012.pdf.txt: 22845 bytes, checksum: c9d103cfb3ee3f5083930c9ed5551518 (MD5)en
dc.description.provenanceMade available in DSpace on 2015-11-26T17:13:29Z (GMT). No. of bitstreams: 2 WOS000225477800012.pdf: 51003 bytes, checksum: e1b4339b4b264b236fee3c3e05b22fbc (MD5) WOS000225477800012.pdf.txt: 22845 bytes, checksum: c9d103cfb3ee3f5083930c9ed5551518 (MD5) Previous issue date: 2004en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/74511pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/74511
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/74511-
dc.contributor.departmentDepartamento de Física da Matéria Condensadapt_BR
dc.contributor.unidadeInstituto de Física "Gleb Wataghin"pt_BR
dc.identifier.source000225477800012pt_BR
dc.creator.orcidorcid.org/0000-0002-2784-812Xpt_BR
dc.type.formArtigopt_BR
dc.type.formArtigopt_BR
dc.identifier.articleid193205pt_BR
dc.description.sponsorNoteThis research was supported by the agencies FAPESP and CNPq. We thank CENAPAD-SP for computer time and also acknowledge G. M. Dalpian for useful discussions.pt_BR
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