Please use this identifier to cite or link to this item:
Type: Artigo
Title: Stabilization of substitutional Mn in silicon-based semiconductors
Author: Silva, Antônio J. R. da
Fazzio, A.
Antonelli, Alex
Abstract: We systematically investigate, using ab initio density-functional theory calculations, the properties of interstitial and substitutional Mn in both Si and Ge, as well as in the Si1−xGex alloy. We show that volume effects are not the main reason Mn prefers to be a subsitutional impurity in pure Ge, and chemical effects, therefore, play an important role. Using realistic models of Si1−xGex, we show that for x≥0.16 substitutional Mn in Ge-rich neighborhoods become more stable than interstitial Mn, which may allow the growth of Si-based diluted magnetic semiconductors.
Subject: Ferromagnetismo
Semicondutores magnéticos
Country: Estados Unidos
Editor: American Physical Society
Citation: Physical Review B. American Physical Soc, v. 70, n. 19, 2004.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.70.193205
Date Issue: 2004
Appears in Collections:IFGW - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000225477800012.pdf49.81 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.