Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/74292
Type: Artigo de periódico
Title: SiO2 single layer for reduction of the standing wave effects in the interference lithography of deep photoresist structures on Si
Author: Carvalho, EJ
Alves, MAR
Braga, ES
Cescato, L
Abstract: We demonstrate that the use of a single SiO2 film, with thickness corresponding to one standing wave (SW) period allows the recording of deep photoresist structures on silicon substrates by laser interference, without use of any additional antireflecting coating. This condition corresponds just to the opposite thickness (half SW period) previously proposed for using the SiO2 films for phase-shifting the SW pattern. Theoretical and experimental results demonstrated that for the lithography of deep structures, the contrast of the SW pattern, the minimum light intensity of the SW pattern and the photoresist adhesion are the most important parameters of the process. (c) 2006 Elsevier Ltd. All rights reserved.
Subject: interference lithography
standing wave pattern
deep photoresist structures
RIE plasma etching
Country: Inglaterra
Editor: Elsevier Sci Ltd
Rights: fechado
Identifier DOI: 10.1016/j.mejo.2006.07.027
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

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