Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/74267
Type: Artigo
Title: Single particle scattering from hot electrons in GaAs
Author: Turtelli, R. S.
Castro, A. R. B. de
Leite, R. C. C.
Abstract: Two photon-absorption in GaAs from a pulsed Nd : Yag laser induced nonequilibrium distributions of electrons and optical phonons in the bulk of the material. The Nd : Yag laser radiation itself is used as a probe to search for population changes of optical phonons and carriersby means of Raman scattering. This allowed comparison of electron and phonon temperatures at different excitation levels. Electrons reached a temperature of 5600 K for a lattice temperature of 300°K.
Two photon-absorption in GaAs from a pulsed Nd : Yag laser induced nonequilibrium distributions of electrons and optical phonons in the bulk of the material. The Nd : Yag laser radiation itself is used as a probe to search for population changes of optical phonons and carriersby means of Raman scattering. This allowed comparison of electron and phonon temperatures at different excitation levels. Electrons reached a temperature of 5600 K for a lattice temperature of 300°K.
Subject: Feixes de laser
Lasers de estado sólido
Semicondutores de arsenieto de gálio
Country: Reino Unido
Editor: Pergamon Press
Citation: Solid State Communications. Pergamon-elsevier Science Ltd, v. 16, n. 8, n. 969, n. 971, 1975.
Rights: fechado
Identifier DOI: 10.1016/0038-1098(75)90631-6
Address: https://www.sciencedirect.com/science/article/pii/0038109875906316
Date Issue: 1975
Appears in Collections:IFGW - Artigos e Outros Documentos

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