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dc.contributor.CRUESPUniversidade Estadual de Campinaspt_BR
dc.typeArtigo de periódicopt_BR
dc.titleSIMULATION OF RENNINGER SCANS FOR HETEROEPITAXIC LAYERSpt_BR
dc.contributor.authorDACOSTA, CABSpt_BR
dc.contributor.authorCARDOSO, LPpt_BR
dc.contributor.authorMAZZOCCHI, VLpt_BR
dc.contributor.authorPARENTE, CBRpt_BR
unicamp.authorIPEN,CNEN SP,BR-05499 PINHEIROS,SP,BRAZILpt_BR
dc.subject.wosMultiple Diffractionpt_BR
dc.description.abstractIn this work, X-ray Renninger scans for semiconductor single-crystal and heteroepitaxic structures are simulated. The simulation program is based on the iterative method for the calculation of multiple diffraction in imperfect crystals. The calculated diffracted-beam path length takes into account the small thickness of the heteroepitaxic layers in order to reproduce the survival of only surface secondary reflections in the layer Renninger scans. Applications of these simulations for bulk material (GaAs, GaSb), binary layers (GaAs/Si) and ternary layers (InGaAs/GaAs) show very good agreement with the corresponding experimental scans.pt
dc.relation.ispartofJournal Of Applied Crystallographypt_BR
dc.relation.ispartofabbreviationJ. Appl. Crystallogr.pt_BR
dc.publisher.cityCopenhagenpt_BR
dc.publisher.countryDinamarcapt_BR
dc.publisherMunksgaard Int Publ Ltdpt_BR
dc.date.issued1992pt_BR
dc.date.monthofcirculation37043pt_BR
dc.identifier.citationJournal Of Applied Crystallography. Munksgaard Int Publ Ltd, v. 25, n. 366, n. 371, 1992.pt_BR
dc.language.isoenpt_BR
dc.description.volume25pt_BR
dc.description.issuepart3pt_BR
dc.description.initialpage366pt_BR
dc.description.lastpage371pt_BR
dc.rightsabertopt_BR
dc.sourceWeb of Sciencept_BR
dc.identifier.issn0021-8898pt_BR
dc.identifier.wosidWOS:A1992HY82600006pt_BR
dc.date.available2014-12-16T11:32:17Z
dc.date.available2015-11-26T16:28:03Z-
dc.date.accessioned2014-12-16T11:32:17Z
dc.date.accessioned2015-11-26T16:28:03Z-
dc.description.provenanceMade available in DSpace on 2014-12-16T11:32:17Z (GMT). No. of bitstreams: 1 WOSA1992HY82600006.pdf: 589397 bytes, checksum: 81ffe5cc9b10c5c78465ba4bc887dc9e (MD5) Previous issue date: 1992en
dc.description.provenanceMade available in DSpace on 2015-11-26T16:28:03Z (GMT). No. of bitstreams: 2 WOSA1992HY82600006.pdf: 589397 bytes, checksum: 81ffe5cc9b10c5c78465ba4bc887dc9e (MD5) WOSA1992HY82600006.pdf.txt: 22216 bytes, checksum: c37595da00939781180beae59bb7a661 (MD5) Previous issue date: 1992en
dc.identifier.urihttp://www.repositorio.unicamp.br/jspui/handle/REPOSIP/74177pt_BR
dc.identifier.urihttp://www.repositorio.unicamp.br/handle/REPOSIP/74177
dc.identifier.urihttp://repositorio.unicamp.br/jspui/handle/REPOSIP/74177-
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