Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/73994
Type: Artigo de periódico
Title: Synchrotron radiation multiple diffraction study of Al0.304Ga0.172In0.524As MOVPE grown onto InP(001)
Author: Sasaki, JM
Cardoso, LP
Campos, C
Roberts, KJ
Clark, GF
Pantos, E
Sacilotti, MA
Abstract: Synchrotron radiation multiple diffraction in Renninger scanning (RS) geometry is used to characterise an Al0.304Ga0.172In0.524As hetero-epitaxial layer MOVPE grown onto InP(001). (006) RS data for bulk, InP substrate and the quaternary layer were obtained using a new experimental set-up on station 7.6 at the Daresbury synchrotron radiation source. Examination of the multiple diffraction peak profiles reveal the epitaxial layers to have a higher mosaic spread than the underlying substrate materials. Measurements of the layer parallel lattice parameter a(parallel to) = 5.8755 +/- 0.0003 Angstrom, as deduced from the tetragonal distortion measured at the 6-beam case in the layer RS, agrees very well with that obtained from the 222 <(22)over bar 2> intensity modulation on the substrate RS MORSI (modulation on the RS intensity due to the presence of the epilayers, Greenberg and Ladell, Appl. Phys. Lett 50 (1987) 436), which gives a(parallel to) = 5.877 +/- 0.002 Angstrom. Simulation of the layer RS using the MULTX program is consistent with a layer normal lattice parameter a(perpendicular to) = 5.8574 Angstrom in good agreement with the corresponding experimental data.
Subject: synchrotron radiation multiple diffraction
III-V compounds
MOVPE
hetero-epitaxial growth
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/S0022-0248(96)00763-4
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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