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|Type:||Artigo de periódico|
|Title:||Uncooled performance of 10-Gb/s laser modules with InGaAlAs-InP and InGaAsP-InP MQW electroabsorption modulators integrated with semiconductor amplifiers|
|Abstract:||Uncooled operation of long-reach high performance C-band 10 Gb/s of optical modulator modules is presented. Modules consisting of a distributed feedback laser and a chip with a monolithically integrated electroalisorption modulator and semiconductor optical amplifier based on multiquantum-well structures of both InGaAsP-InP and InGaAlAS-InP material systems are presented. Dispersion penalty of 1 dB over 94-km transmission, output power above 0 dBm, and low extinction ratio variation are demonstrated over an 80 degrees C temperature range. A simple analysis of the quantum confined Stark effect is employed to explain the temperature-dc bias voltage dependence.|
quantum confined Stark effect (QCSE)
|Editor:||Ieee-inst Electrical Electronics Engineers Inc|
|Appears in Collections:||Artigos e Materiais de Revistas Científicas - Unicamp|
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