Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72958
Type: Artigo de periódico
Title: X-ray multiple diffraction in the characterization of TiNO and TiO2 thin films grown on Si(001)
Author: Chiaramonte, T
Abramof, E
Fabreguette, F
Sacilotti, M
Cardoso, LP
Abstract: TiO2 and TiNxOy thin films grown by low pressure metal-organic chemical vapor deposition (LP-MOCVD) on top of Si(001) substrate were characterized by X-ray multiple diffraction. X-ray reflectivity analysis of TiO2[1 1 0] and TiNO[ 1 0 0] polycrystalline layers allowed to determine the growth rate (-80 angstrom/min) of TiO2 and (-40 angstrom/min) of TiNO films. X-ray multiple diffraction through the Renninger scans, i.e., phi-scans for (0 0 2)Si substrate primary reflection is used as a non-conventional method to obtain the substrate lattice parameter distortion due to the thin film conventional deposition, from where the information on film strain type is obtained. (c) 2006 Elsevier B.V. All rights reserved.
Subject: TiO2
TiNO
MOCVD
thin film
X-ray multiple diffraction
Renninger scan
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/j.apsusc.2006.02.064
Date Issue: 2006
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000242818000090.pdf320.26 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.