Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: X-ray multiple diffraction in Renninger scanning mode: Simulation of data recorded using synchrotron radiation
Author: Sasaki, JM
Cardoso, LP
Campos, C
Roberts, KJ
Clark, GF
Pantos, E
Sacilotti, MA
Abstract: The application limit of the MULTX program for predicting Renninger-scanning X-ray multiple diffraction data is extended in order to simulate Renninger scans for semiconductor single-crystal and heteroepitaxial structures recorded using synchrotron radiation. The experimental synchrotron-radiation Renninger scan for InP(006) bulk material is taken as the standard to analyse the effects of both the polarization factor and diffracted-beam path length. The polarization of the synchrotron-radiation beam is considered using a matrix approach. The diffracted-beam path length involved in the surface secondary beam cases is analysed taking into account the dynamical theory for perfect crystals and the kinematical theory as the limit of the dynamical case for thin crystals. Renninger scans of AlGaInAs quaternary layer structures, simulated with the MULTX program, show a very good agreement (R = 0.085) with the corresponding experimental data.
Country: Dinamarca
Editor: Munksgaard Int Publ Ltd
Citation: Journal Of Applied Crystallography. Munksgaard Int Publ Ltd, v. 29, n. 325, n. 330, 1996.
Rights: aberto
Identifier DOI: 10.1107/S0021889896001641
Date Issue: 1996
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
There are no files associated with this item.

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.