Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72942
Type: Artigo de periódico
Title: XPS investigation of plasma-deposited polysiloxane films irradiated with helium ions
Author: Gelamo, RV
Landers, R
Rouxinol, FPM
Trasferetti, BC
de Moraes, MAB
Davanzo, CU
Durrant, SF
Abstract: This work describes an XPS investigation of plasma-deposited polysiloxane films irradiated with 170 keV He+ ions at fluences, Phi, ranging from 1 x 10(14) to 1 x 10(16) cm(-2). Modifications in the atomic concentrations of the surface atoms with (D were revealed by changes in the [O]/[Si], [O]/[C] and [C]/[Si] atomic ratios. Surface chemical structure modifications were evidenced by the increasing C1s peak width and asymmetry as Phi was increased, due to the formation of ether and carboxyl functionalities. Moreover, structural transformations were indicated by the positive binding energy shift of the Si2p peaks, due to the increasing Si oxidation. Correlations of the XPS data with other results from previous work on polysiloxanes illustrate the role of ion beam-induced bond breaking on the structural modifications.
Subject: chemical structure
hexamethyldisiloxane (HMDSO)
ion irradiation
polysiloxane
plasma enhanced chemical vapor deposition (PECVD)
X-ray photoelectron spectroscopy (XPS)
Country: Alemanha
Editor: Wiley-v C H Verlag Gmbh
Rights: fechado
Identifier DOI: 10.1002/ppap.200600100
Date Issue: 2007
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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