Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72729
Type: Artigo de periódico
Title: Vertical stacks of InAs quantum wires in an InP matrix
Author: Gutierrez, HR
Cotta, MA
de Carvalho, MMG
Abstract: In this work, multilayered films-consisting of layers of self-assembled InAs quantum wires separated by InP spacers-were deposited on (0 0 1) InP substrates. We studied the vertical alignment of the nanostructures by using cross-section transmission electron microscopy (XTEM). A clear relation between the geometry of the wire cross-section and the stacking angles was observed. For asymmetric wires the stacking angle with respect to the growing direction is larger. Moreover, XTEM shows that the strain field generated by two nanowires can induce the nucleation of a unique wider nanowire in the subsequent InAs layer. Similarly to quantum-dot multilayers systems, this mechanism could produce uniform width distribution for the self-assembled nanowires. (C) 2003 Elsevier Science B.V. All rights reserved.
Subject: nanostructures
chemical beam epitaxy
nanomaterials
semiconducting
III-V materials
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/S0022-0248(03)01095-9
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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