Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72396
Type: Artigo de periódico
Title: The role of oxygen partial pressure and annealing temperature on the formation of W=O bonds in thin WO3 films
Author: Bittencourt, C
Landers, R
Llobet, E
Correig, X
Calderer, J
Abstract: Thin films of tungsten oxide were deposited onto silicon substrates using reactive rf sputtering. The structure of the films is strongly dependent on the conditions of deposition and post-treatment. Important issues are the influences of oxygen pressure during deposition and of annealing temperature. We used x-ray photoelectron spectroscopy to investigate the in-depth composition of the films. The most surface sensitive O 1s core level spectra are made up of two structures, one generated by photoelectrons emitted from oxygen atoms in WO3 (O-W-O) and other at lower energy generated by the photoelectrons emitted from oxygen atoms located at the boundary of the grains (W=O). Using Raman spectroscopy, an increase of the W=O/O-W-O ratio was correlated to an increase in the oxygen partial pressure used during the deposition. A decrease of this ratio was observed while annealing temperature was increased, which was correlated to an increase in the size of the grains that form the films.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0268-1242/17/6/304
Date Issue: 2002
Appears in Collections:Unicamp - Artigos e Outros Documentos

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