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|Type:||Artigo de periódico|
|Title:||The role of oxygen partial pressure and annealing temperature on the formation of W=O bonds in thin WO3 films|
|Abstract:||Thin films of tungsten oxide were deposited onto silicon substrates using reactive rf sputtering. The structure of the films is strongly dependent on the conditions of deposition and post-treatment. Important issues are the influences of oxygen pressure during deposition and of annealing temperature. We used x-ray photoelectron spectroscopy to investigate the in-depth composition of the films. The most surface sensitive O 1s core level spectra are made up of two structures, one generated by photoelectrons emitted from oxygen atoms in WO3 (O-W-O) and other at lower energy generated by the photoelectrons emitted from oxygen atoms located at the boundary of the grains (W=O). Using Raman spectroscopy, an increase of the W=O/O-W-O ratio was correlated to an increase in the oxygen partial pressure used during the deposition. A decrease of this ratio was observed while annealing temperature was increased, which was correlated to an increase in the size of the grains that form the films.|
|Editor:||Iop Publishing Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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