Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72295
Type: Artigo de periódico
Title: The protective effect of thin amorphous hydrogenated carbon a-C : H films during metallisation of metal-carbon-oxide-silicon (MCOS) diodes
Author: Balachova, O
Braga, ES
Abstract: Capacitance-voltage (C-V) characteristics of the as-grown metal (M)-carbon-oxide(SiO2)-semiconductor(Si) structures are examined at the frequency of I MHz and compared with the C-V characteristics of the conventional metal(Al)-SiO2-Si (MOS) Structures. The density of the oxide charge Q(o)/q is extracted from the experimental results. Q(o)/q was found to be I x 10(12) cm(-2) for the MOS structures and 7 X 10(11) cm(-2) for the metal-carbon-oxide-silicon structures. This difference can be attributed to the presence of the carbon layer which acts as a protective coating during metallisation of the wafers. (C) 2003 Elsevier Science Ltd. All rights reserved.
Subject: amorphous hydrogenated carbon
C-V measurements
oxide trapped charge
Country: Inglaterra
Editor: Elsevier Advanced Technology
Rights: fechado
Identifier DOI: 10.1016/S0026-2692(03)00008-9
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

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