Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72193
Type: Artigo de periódico
Title: The origin of visible photoluminescence in low power a-Si1-xCx : H with x > 0.2
Author: Tessler, LR
Abstract: Photoluminescence decay measurements were performed in a series of a-Si1-xCx:H samples with 0 < x < 0.5 prepared in the low power regime, i.e. containing virtually no sp(2) carbon. The decay is non-exponential and presents two peaks in the lifetime distribution for x > 0.2, one slow peak associated to a-Si:H-like luminescence and a fast peak that is responsible for the temperature independent visible luminescence. We conclude that the efficient temperature independent visible photoluminescence is due to a mechanism that is ineffective in a-Si:H, which we attribute to enhanced Coulomb interaction between electron and hole. (C) 1999 Elsevier Science Ltd. All rights reserved.
Subject: semiconductors
thin films
electronic states (localized)
luminescence
time-resolved optical spectroscopies
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/S0038-1098(99)00193-3
Date Issue: 1999
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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