Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72174
Type: Artigo de periódico
Title: Spin injection in n-type resonant tunneling diodes
Author: Gordo, VO
Herval, LKS
Galeti, HVA
Gobato, YG
Brasil, MJSP
Marques, GE
Henini, M
Airey, RJ
Abstract: We have studied the polarized resolved photoluminescence of n-type GaAs/AlAs/GaAlAs resonant tunneling diodes under magnetic field parallel to the tunnel current. Under resonant tunneling conditions, we have observed two emission lines attributed to neutral (X) and negatively charged excitons (X-). We have observed a voltage-controlled circular polarization degree from the quantum well emission for both lines, with values up to -88% at 15 T at low voltages which are ascribed to an efficient spin injection from the 2D gases formed at the accumulation layers.
Subject: Spintronics
nanostructure
resonant tunneling diode
photoluminescence
Country: EUA
Editor: Springer
Rights: aberto
Identifier DOI: 10.1186/1556-276X-7-592
Date Issue: 2012
Appears in Collections:Unicamp - Artigos e Outros Documentos

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