Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72173
Type: Artigo de periódico
Title: Spin injection from two-dimensional electron and hole gases in resonant tunneling diodes
Author: Gobato, YG
Galeti, HVA
dos Santos, LF
Lopez-Richard, V
Cesar, DF
Marques, GE
Brasil, MJSP
Orlita, M
Kunc, J
Maude, DK
Henini, M
Airey, RJ
Abstract: We have investigated the polarized-resolved photoluminescence from the contact layers and the quantum-well in an n-type GaAs/GaAlAs resonant tunneling diode for magnetic fields up to 19 T. The optical emission from the GaAs contact layers comprises the recombination from highly spin-polarized two-dimensional electron and hole gases with free tunneling carriers. Both the energy position and intensity of this indirect recombination are voltage-dependent and show remarkably abrupt variations near scattering-assisted tunneling resonances. Our results show that these two dimensional gases act as spin-polarized sources for carriers tunneling through the well in resonant tunneling diodes. (C) 2011 American Institute of Physics. [doi:10.1063/1.3668087]
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.3668087
Date Issue: 2011
Appears in Collections:Unicamp - Artigos e Outros Documentos

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