Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/72169
Type: Artigo de periódico
Title: Spin effects in InAs self-assembled quantum dots
Author: dos Santos, EC
Gobato, YG
Brasil, MJSP
Taylor, DA
Henini, M
Abstract: We have studied the polarized resolved photoluminescence in an n-type resonant tunneling diode (RTD) of GaAs/AlGaAs which incorporates a layer of InAs self-assembled quantum dots (QDs) in the center of a GaAs quantum well (QW). We have observed that the QD circular polarization degree depends on applied voltage and light intensity. Our results are explained in terms of the tunneling of minority carriers into the QW, carrier capture by InAs QDs and bias-controlled density of holes in the QW.
Country: EUA
Editor: Springer
Rights: aberto
Identifier DOI: 10.1186/1556-276X-6-115
Date Issue: 2011
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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