Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71998
Type: Artigo de periódico
Title: Spatial composition dependence in InGaP growth on pre-patterned GaAs substrates by chemical beam epitaxy
Author: de Castro, MPP
Frateschi, NC
Bettini, J
Ribeiro, CA
de Carvalho, MM
Abstract: We have investigated the spatial composition variation in InGaP layers grown by chemical beam epitaxy (CBE) on pre-patterned substrates. At growth temperature of 540 degrees C, no difference between In and Ga growth properties is observed. At 500 degrees C, we observe the onset of new crystalline planes on the side walls of the pre-patterned structure. Finally, we show how these planes are related to a measured strong spatial composition variation. (C) 1999 Elsevier Science B.V. All rights reserved.
Subject: patterned substrates
InGaP
spatial composition variation
growth temperature
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/S0022-0248(99)00121-9
Date Issue: 1999
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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