Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71882
Type: Artigo
Title: Solving the thermal stability problem at the HfO2 /Si interface with previous N implantation
Author: Carazzolle, M. F.
Flüchter, C. R.
Siervo, A. de
Pancotti, A.
Weier, D.
Schürmann, M.
Westphal, C.
Landers, R.
Kleiman, G. G.
Abstract: We report on the use of N implantation to produce thin, pure, uniform, and thermally stable Si3N4 buffer layers and HfO2 overlayers on Si(100) and Si(111) without silicide formation.
We report on the use of N implantation to produce thin, pure, uniform, and thermally stable Si3N4 buffer layers and HfO2 overlayers on Si(100) and Si(111) without silicide formation.
Subject: Dielétricos
Háfnio
Termogravimetria
Country: Estados Unidos
Editor: AIP Publishing
Citation: Journal Of Applied Physics. Amer Inst Physics, v. 107, n. 5, 2010.
Rights: fechado
Identifier DOI: 10.1063/1.3298438
Address: https://aip.scitation.org/doi/full/10.1063/1.3298438
Date Issue: 2010
Appears in Collections:IFGW - Artigos e Outros Documentos

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