Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71882
Type: Artigo de periódico
Title: Solving the thermal stability problem at the HfO2/Si interface with previous N implantation
Author: Carazzolle, MF
Fluchter, CR
de Siervo, A
Pancotti, A
Weier, D
Schurmann, M
Westphal, C
Landers, R
Kleiman, GG
Abstract: We report on the use of N implantation to produce thin, pure, uniform, and thermally stable Si3N4 buffer layers and HfO2 overlayers on Si(100) and Si(111) without silicide formation. (C) 2010 American Institute of Physics. [doi: 10.1063/1.3298438]
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.3298438
Date Issue: 2010
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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