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|Type:||Artigo de periódico|
|Title:||Scaling laws in etched Si surfaces|
|Abstract:||Self-affine scaling behavior of etched crystalline Si surfaces has been investigated by atomic force microscope. Si surfaces were etched by a small drop (a few muL) of NaOH solution. Percolation characteristics were observed at the initial stages of Si(100) chemical etching. Roughness exponent (alpha) values increase with etching time, from 0.6 to 0.8, and the alpha functional behavior with respect to the etching power agrees with the Kessler-Levine-Tu model. Anomalous scaling behavior was characterized for etched Si(111) surfaces. The local value of the roughness exponent is associated to the diffusional process of plateau growth. The global value of alpha is close to 0.4, a typical value for the Kardar-Parisi-Zang model, reflecting the highest growth rates on surfaces with higher slopes.|
|Editor:||American Physical Soc|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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