Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71470
Type: Artigo de periódico
Title: Sensitivity of Bragg surface diffraction to analyze ion-implanted semiconductors
Author: Hayashi, MA
Morelhao, SL
Avanci, LH
Cardoso, LP
Sasaki, JM
Kretly, LC
Chang, SL
Abstract: A special case of the x-ray multiple diffraction phenomenon, the Bra,og surface diffraction (BSD), has been investigated under lattice damage due to ion implantation in GaAs (001) samples. The BSD profile is very sensitive to the diffraction regime (dynamical or kinematical) and provides information regarding crystalline perfection and lattice strains in both directions-parallel and perpendicular-to the sample surface. Results from grazing-incidence x-ray diffraction and are also reported. (C) 1997 American Institute of Physics.
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.120157
Date Issue: 1997
Appears in Collections:Unicamp - Artigos e Outros Documentos

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