Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71469
Type: Artigo de periódico
Title: Sensitivity enhancement in thermoreflectance microscopy of semiconductor devices using suitable probe wavelengths
Author: de Freitas, LR
da Silva, EC
Mansanares, AM
Tessier, G
Fournier, D
Abstract: In this paper we present an experimental and theoretical study of the thermoreflectance response as a function of the probe wavelength for layered microelectronics structures. The investigated sample consists of a polycrystalline silicon conducting track grown on a SiO2-coated Si substrate. Thermoreflectance measurements were carried out in the wavelength range from 450 to 750 nm with the track biased in modulated regime. An oscillating pattern is observed in the spectral region where the upper layer is transparent. Such oscillations are due to the interference resulting from the multiple reflections at the interfaces. Using a thermo-optical model, we show that the optical constants (n and k) of the materials, which are wavelength dependent, as well as their temperature derivatives (dn/dT and dk/dT), strongly influence the thermoreflectance signal. The optical thicknesses of the layers, mainly determined by the real part of the refractive indices, define the period of oscillation. On the other hand, the imaginary part of the refractive indices establishes the cutoff wavelength of the oscillations. Below this cutoff wavelength, the probe light does not penetrate the material and the upper-surface reflectance dominates the signal. (c) 2005 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.2043231
Date Issue: 2005
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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