Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71433
Type: Artigo de periódico
Title: Semiconductor optical amplifier cavity length impact over data erasing/rewriting
Author: Ribeiro, NS
Gallep, CM
Conforti, E
Abstract: The erasing of optical carrier intensity modulation and posterior data rewriting are analyzed for two semiconductor optical amplifiers with different active lengths: 2 mm and 8 mm long.Input signal extinction ratios (ERin) varying from 3.5 dB up to 10 dB are tested for the downstream channel at different bit rates (from 7 Gb/s up to 56 Gb/s), followed by remodulation of the upstream channel at 7 Gb/s. The ultra-long 8 mm device shows superior performance, working error-free for bit rates up to 30 Gb/s, with negligible power penalties for moderate ERin. However, for high bit rates (>40 Gb/s) and high input extinction ratios (ERin = 10 dB), the 8 mm device shows error-floor at BER = 106. In comparison, even for moderate ERin at 40 Gb/s, the 2 mm device already presents error-floors at BER = 103. (c) 2013 Wiley Periodicals, Inc. Microwave Opt Technol Lett 55:9981001, 2013; View this article online at wileyonlinelibrary.com. DOI 10.1002/mop.27496
Subject: onlinear optics
optical signal processing
semiconductor optical amplifier
Country: EUA
Editor: Wiley-blackwell
Rights: fechado
Identifier DOI: 10.1002/mop.27496
Date Issue: 2013
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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