Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71352
Type: Artigo de periódico
Title: Selective deposition of amorphous hydrogenated carbon films used as masks for reactive ion etching of Si using CF4
Author: Alves, MAR
Balachova, O
Braga, EDS
Cescato, L
Abstract: The use of a-C:H films as masks for reactive ion etching (RIE) of Si using CF4 is reported. Films of a-C:H were deposited at room temperature, and successfully patterned on Si by lift-off. They were highly resistant to CF4RIE and showed good selectivity in relation to Si etch rates. Lines of 1 mu m feature size were patterned on Si, resulting in perpendicular sidewalls and no observable undercutting. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/S0042-207X(98)00305-4
Date Issue: 1999
Appears in Collections:Unicamp - Artigos e Outros Documentos

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