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|Type:||Artigo de periódico|
|Title:||Selective deposition of amorphous hydrogenated carbon films used as masks for reactive ion etching of Si using CF4|
|Abstract:||The use of a-C:H films as masks for reactive ion etching (RIE) of Si using CF4 is reported. Films of a-C:H were deposited at room temperature, and successfully patterned on Si by lift-off. They were highly resistant to CF4RIE and showed good selectivity in relation to Si etch rates. Lines of 1 mu m feature size were patterned on Si, resulting in perpendicular sidewalls and no observable undercutting. (C) 1999 Published by Elsevier Science Ltd. All rights reserved.|
|Editor:||Pergamon-elsevier Science Ltd|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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