Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71347
Type: Artigo de periódico
Title: Selective area deposition of a-C : H films as masks for anisotropic etching of crystalline silicon in aqueous potassium hydroxide
Author: Fissore, A
Alves, MAR
Braga, ED
Cescato, L
Abstract: Amorphous hydrogenated carbon (a-C:H) thin films deposited by r.f. chemical vapor deposition were investigated as a chemically resistant material for masking anisotropic etching of crystalline silicon by aqueous solution of KOH. Films with thicknesses varying from 50 to 80 nm were successfully patterned on silicon slices by the lift-off process. Then the samples were submitted to one aqueous etchant solution of KOH for 1 h at a temperature of 78 degrees C. The inspection showed well defined etching pattern indicating the high chemical resistance of the a-C:H film to the aqueous KOH solution. (C) 1998 Elsevier Science Ltd. All rights reserved.
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/S0042-207X(97)00131-0
Date Issue: 1998
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

Files in This Item:
File Description SizeFormat 
WOS000072473600009.pdf276.36 kBAdobe PDFView/Open


Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.