Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71325
Type: Artigo de periódico
Title: Segregation trends of the metal alloys Mo-Re and Mo-Pt on HfO2: A first-principles study
Author: Knizhnik, AA
Gavrikov, AV
Safonov, AA
Iskandarova, IM
Bagatur'yants, AA
Potapkin, BV
Fonseca, LRC
Stoker, MW
Abstract: Using first-principles calculations, we compared the segregation trends at the surface of metal alloys with those at an interface with HfO2. The choice of this oxide was motivated by its significance as a potential replacement for SiO2 in advanced transistors. We considered Mo-Re and Mo-Pt alloys as typical examples of disordered and ordered alloys, respectively. The segregation to the surface/interface was analyzed in terms of metal and oxygen adsorption energies. It is shown that chemical bonding at the metal/oxide interface strongly influences segregation both in Mo-Re and Mo-Pt alloys. In particular, bonding with oxygen atoms at the oxide/Mo-Re alloy interface depletes the Re content of the interfacial layer. In the case of Mo-Pt on HfO2 an oxygen-rich interface promotes the formation of one monolayer (but not two monolayers) of Mo separating PtMox from HfO2, while a stoichiometric interface favors an abrupt PtMox/HfO2 interface. This study also shows that the presence of Mo in the alloy stabilizes Pt which can potentially decrease the tendency of Pt to diffuse into the oxide matrix. The individual constituents of these intermetallic compounds exhibit high vacuum work functions, and therefore these alloys are also likely to have sufficiently high work functions to be considered as promising candidates for p-type gate electrodes in future generations of transistors. (c) 2006 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1063/1.2209768
Date Issue: 2006
Appears in Collections:Artigos e Materiais de Revistas Científicas - Unicamp

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