Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Resonant x-ray scattering from self-assembled InP/GaAs(001) islands: Understanding the chemical structure of quaternary quantum dots
Author: Coelho, LN
Magalhaes-Paniago, R
Malachias, A
Zelcovit, JG
Cotta, MA
Abstract: Lattice parameter profiles and the chemical structure of InP self-assembled islands grown on GaAs(001) were determined with x-ray resonant scattering. By accessing four different photon energies, near x-ray absorption edges of two of the atomic species present on the samples, composition maps of all four atomic constituents of these islands were obtained. This experiment was performed for samples grown at two different temperatures and the effect of temperature was associated to Ga-interdiffusion and strain relief in the dots. (c) 2008 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Citation: Applied Physics Letters. Amer Inst Physics, v. 92, n. 2, 2008.
Rights: aberto
Identifier DOI: 10.1063/1.2820756
Date Issue: 2008
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000252470900035.pdf661.85 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.