Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/71023
Type: Artigo de periódico
Title: Resonant structures based on amorphous silicon suboxide doped with Er3+ with silicon nanoclusters for an efficient emission at 1550 nm
Author: Figueira, DSL
Mustafa, D
Tessler, LR
Frateschi, NC
Abstract: The authors present a resonant approach to enhance 1550 nm emission efficiency of amorphous silicon suboxide doped with Er3+ (a-SiOx << Er >>) layers with silicon nanoclusters (Si-NC). Our results show an important result toward enabling the use of silicon-based material for active photonic component fabrication. Two distinct techniques were combined to fabricate a structure that allowed increasing approximately 12 times the 1550 nm emission. First, layers of SiO2 were obtained by conventional wet oxidation and a-SiOx << Er >> matrix was deposited by reactive rf cosputtering. Second, an extra pump channel (I-4(15/2) to I-4(9/2)) of Er3+ was created due to Si-NC formation on the same a-SiOx << Er >> matrix via a hard annealing at 1150 degrees C. The SiO2 and the a-SiOx << Er >> thicknesses were designed to support resonances near the pumping wavelength (similar to 500 nm), near the Si-NC emission (similar to 800 nm) and near the a-SiOx << Er >> emission (similar to 1550 nm) enhancing the optical pumping process.
Subject: amorphous state
annealing
doping
elemental semiconductors
erbium
insulating thin films
nanofabrication
nanostructured materials
optical pumping
oxidation
photoluminescence
resonant states
semiconductor-insulator boundaries
silicon
silicon compounds
sputter deposition
thin films
Country: EUA
Editor: A V S Amer Inst Physics
Rights: aberto
Identifier DOI: 10.1116/1.3246406
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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