Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Relaxation dynamics of hot carriers and phonons in semiconductors: Influence of the excitation conditions
Author: Silva, AAP
Algarte, ACS
Vasconcellos, AR
Luzzi, R
Abstract: The so-called hot-phonon effect that accompanies the rapid relaxation processes in the photoinjected plasma in semiconductors is analyzed, resorting to a nonlinear quantum kinetic theory based on a nonequilibrium ensemble formalism. We concentrate the study on the process of generation and decay of the nonequilibrium longitudinal optical phonon population per mode. Particular attention is paid to the question of the influence of the conditions of excitation imposed on the system, which determine the occurrence of different regimes of relaxation by means of carrier-phonon interactions. Comparison of the relaxation dynamics in the case of several semiconductors with different polar strengths is done. (C) 2001 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Citation: Journal Of Applied Physics. Amer Inst Physics, v. 90, n. 8, n. 3973, n. 3978, 2001.
Rights: aberto
Identifier DOI: 10.1063/1.1402138
Date Issue: 2001
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000171562100043.pdf272.32 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.