Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/70590
Type: Artigo
Title: Point defect interactions with extended defects in semiconductors
Author: Antonelli, A.
Justo, J. F.
Fazzio, A.
Abstract: We performed a theoretical investigation of the interaction of point defects (vacancy and self-interstitials) with an intrinsic stacking fault in silicon using ab initio total-energy calculations. Defects at the fault and in the crystalline environment display a different behavior, which is evidenced by changes in formation energy and electronic structure. The formation energies for the vacancy and the [110]-split interstitial are lower at the intrinsic stacking fault than those in the crystal, indicating that in nonequilibrium conditions, intrinsic stacking faults can act, together with other extended defects, as a sink for point defects, and also that in equilibrium conditions, there can be a higher concentration of such defects at the fault than that in bulk silicon. [S0163-1829(99)03631-0].
We performed a theoretical investigation of the interaction of point defects (vacancy and self-interstitials) with an intrinsic stacking fault in silicon using ab initio total-energy calculations. Defects at the fault and in the crystalline environment display a different behavior, which is evidenced by changes in formation energy and electronic structure. The formation energies for the vacancy and the [110]-split interstitial are lower at the intrinsic stacking fault than those in the crystal, indicating that in nonequilibrium conditions, intrinsic stacking faults can act, together with other extended defects, as a sink for point defects, and also that in equilibrium conditions, there can be a higher concentration of such defects at the fault than that in bulk silicon.
Subject: Silício
Deslocamentos em cristais
Falhas de empilhamento
Country: Estados Unidos
Editor: American Physical Society
Citation: Physical Review B. American Physical Soc, v. 60, n. 7, n. 4711, n. 4714, 1999.
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.60.4711
Address: https://journals.aps.org/prb/abstract/10.1103/PhysRevB.60.4711
Date Issue: 1999
Appears in Collections:IFGW - Artigos e Outros Documentos

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