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|Type:||Artigo de periódico|
|Title:||PROPERTIES OF ALXGA1-XAS WITH AN ALAS BUFFER LAYER ON SI SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY|
|Abstract:||We present the details of growth by metalorganic vapor phase epitaxy and characterization of undoped and Sn doped Al(x)Ga(1-x)As (0 lesser-than-or-equal-to x lesser-than-or-equal-to 0.3) on Si substrates with AlAs buffer layer. Double X-ray diffraction has been performed on these samples and the estimated dislocation density is in the order of 8 x 10(6) cm-2. The carrier concentration in these samples were obtained by Schubnikov-De Haas effect and the observed oscillations compare very well with the Al(x)Ga(1-x)As grown on GaAs substrates. The photoluminescence efficiency in the Sn-doped Al(x)Ga(1-x)As/Si sample is about 640 times greater than in the undoped one and this is attributed to annihilation of non-radiative centers by Sn atoms. The biaxial stress in these films is estimated from the peak positions in the photoluminescence spectra measured as a function of temperature.|
|Editor:||Elsevier Science Bv|
|Citation:||Journal Of Crystal Growth. Elsevier Science Bv, v. 108, n. 41732, n. 615, n. 620, 1991.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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