Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/70539
Type: Artigo de periódico
Title: PROPERTIES OF ALXGA1-XAS WITH AN ALAS BUFFER LAYER ON SI SUBSTRATES GROWN BY METALORGANIC VAPOR-PHASE EPITAXY
Author: BERNUSSI, AA
IIKAWA, F
MOTISUKE, P
BASMAJI, P
Abstract: We present the details of growth by metalorganic vapor phase epitaxy and characterization of undoped and Sn doped Al(x)Ga(1-x)As (0 lesser-than-or-equal-to x lesser-than-or-equal-to 0.3) on Si substrates with AlAs buffer layer. Double X-ray diffraction has been performed on these samples and the estimated dislocation density is in the order of 8 x 10(6) cm-2. The carrier concentration in these samples were obtained by Schubnikov-De Haas effect and the observed oscillations compare very well with the Al(x)Ga(1-x)As grown on GaAs substrates. The photoluminescence efficiency in the Sn-doped Al(x)Ga(1-x)As/Si sample is about 640 times greater than in the undoped one and this is attributed to annihilation of non-radiative centers by Sn atoms. The biaxial stress in these films is estimated from the peak positions in the photoluminescence spectra measured as a function of temperature.
Country: Holanda
Editor: Elsevier Science Bv
Rights: fechado
Identifier DOI: 10.1016/0022-0248(91)90240-6
Date Issue: 1991
Appears in Collections:Unicamp - Artigos e Outros Documentos

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