Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/70328
Type: Artigo de periódico
Title: Probing the electrical anisotropy of multilayer graphene on the Si face of 6H-SiC
Author: Jouault, B
Jabakhanji, B
Camara, N
Desrat, W
Tiberj, A
Huntzinger, JR
Consejo, C
Caboni, A
Godignon, P
Kopelevich, Y
Camassel, J
Abstract: We studied the in-plane magnetoresistance R(B, T) anisotropy in epitaxial multilayer graphene films grown on the Si face of a 6H-SiC substrate that originates from steplike morphology of the SiC substrate. To enhance the anisotropy, a combination of argon atmosphere with graphite capping was used during the film growth. The obtained micro-Raman spectra demonstrated a complex multilayer graphene structure with the smaller film thickness on terraces as compared to the step edges. Several Hall bars with different current/steps mutual orientations have been measured. A clear anisotropy in the magnetoresistance has been observed, and attributed to variations in electron mobility governed by the steplike structure. Our data also revealed that (i) the graphene-layer stacking is mostly Bernal type, (ii) the carriers are massive, and (iii) the carriers are confined to the first 2-4 graphene layers following the buffer layer.
Country: EUA
Editor: Amer Physical Soc
Rights: aberto
Identifier DOI: 10.1103/PhysRevB.82.085438
Date Issue: 2010
Appears in Collections:Unicamp - Artigos e Outros Documentos

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