Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/70088
Type: Artigo de periódico
Title: Preparation and characterization of Cd2Nb2O7 thin films on Si substrates
Author: Ronconi, CM
Goncalves, D
Suvorova, N
Alves, OL
Irene, EA
Abstract: Thin Cd2Nb2O7 films were grown on single-crystal p-type SiO2/Si substrates by the metallo-organic decomposition (MOD) technique. The films were investigated by X-ray diffraction, X-ray energy-dispersive spectroscopy, and field emission scanning electron microscopy, and showed a single phase (cubic pyrochlore), a crack-free spherical grain structure, and nanoparticles with a mean size of about 68 nm. A Cauchy model was also used in order to obtain the thickness and index of refraction of the stack layers (transparent layer/SiO2/Si) by spectroscopic ellipsometry (SE). The dielectric constant (K) of the films was calculated to be about 25 from the capacitance-voltage (C-V) measurements. (c) 2008 Elsevier Ltd. All rights reserved.
Subject: Ceramics
Nanostructures
Oxides
Thin films
Dielectric properties
Country: Inglaterra
Editor: Pergamon-elsevier Science Ltd
Rights: fechado
Identifier DOI: 10.1016/j.jpcs.2008.10.006
Date Issue: 2009
Appears in Collections:Unicamp - Artigos e Outros Documentos

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