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|Type:||Artigo de periódico|
|Title:||Hot-phonon bottleneck in the photoinjected plasma in GaN|
|Abstract:||The evolution on the picosecond scale of the macroscopic (nonequilibrium thermodynamic) state of a highly excited photoinjected plasma in bulk GaN is analyzed. We present the equations of evolution for the quasitemperature (level of excitation) of the hot carriers and of the optical phonons. A hot-phonon temperature overshoot is evidenced, as well as a preferential production of phonons in excess of equilibrium in a reduced off-center region of the Brillouin zone. A comparative analysis of the influence of the length of the exciting laser pulse is also performed. (C) 2003 American Institute of Physics.|
|Editor:||Amer Inst Physics|
|Citation:||Applied Physics Letters. Amer Inst Physics, v. 82, n. 15, n. 2455, n. 2457, 2003.|
|Appears in Collections:||Unicamp - Artigos e Outros Documentos|
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