Please use this identifier to cite or link to this item:
Type: Artigo de periódico
Title: Hot-phonon bottleneck in the photoinjected plasma in GaN
Author: Vasconcellos, AR
Luzzi, R
Rodrigues, CG
Freire, VN
Abstract: The evolution on the picosecond scale of the macroscopic (nonequilibrium thermodynamic) state of a highly excited photoinjected plasma in bulk GaN is analyzed. We present the equations of evolution for the quasitemperature (level of excitation) of the hot carriers and of the optical phonons. A hot-phonon temperature overshoot is evidenced, as well as a preferential production of phonons in excess of equilibrium in a reduced off-center region of the Brillouin zone. A comparative analysis of the influence of the length of the exciting laser pulse is also performed. (C) 2003 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Citation: Applied Physics Letters. Amer Inst Physics, v. 82, n. 15, n. 2455, n. 2457, 2003.
Rights: aberto
Identifier DOI: 10.1063/1.1566467
Date Issue: 2003
Appears in Collections:Unicamp - Artigos e Outros Documentos

Files in This Item:
File Description SizeFormat 
WOS000182104900029.pdf240.81 kBAdobe PDFView/Open

Items in DSpace are protected by copyright, with all rights reserved, unless otherwise indicated.