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Type: Artigo de periódico
Title: Hole mobility in zincblende c-GaN
Author: Rodrigues, CG
Fernandez, JRL
Leite, JR
Chitta, VA
Freire, VN
Vasconcellos, AR
Luzzi, R
Abstract: We consider the nonequilibrium thermodynamic state of carriers in III-nitrides, and calculate the mobility of holes in cubic GaN layers under electric fields of low intensity. The contribution of different scattering mechanisms to the mobility is analyzed, and the relevance of each one is characterized. Satisfactory agreement with recently published experimental data is obtained. (C) 2004 American Institute of Physics.
Country: EUA
Editor: Amer Inst Physics
Citation: Journal Of Applied Physics. Amer Inst Physics, v. 95, n. 9, n. 4914, n. 4917, 2004.
Rights: aberto
Identifier DOI: 10.1063/1.1690865
Date Issue: 2004
Appears in Collections:Unicamp - Artigos e Outros Documentos

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