Please use this identifier to cite or link to this item: http://repositorio.unicamp.br/jspui/handle/REPOSIP/69534
Type: Artigo de periódico
Title: Optical emission and its decay time of type-II InP/GaAs quantum dots
Author: Gomes, PF
de Godoy, MPF
Dias, GO
Iikawa, F
Brasil, MJSP
Cotta, MA
Madureira, JR
Abstract: We investigated the optical emission at 2K from InP quantum dots (QDs) grown on GaAs with and without a GaAs capping layer. Uncapped QDs present relatively long emission decay times (4-14 ns). In contrast, dots covered with a GaAs layer present much shorter lifetimes (similar to 1 ns). We analyse those results considering the effects of surface states (non-radiative recombination channel) and intermixing at the interfaces (affecting the electron-hole wave-function overlap). The continuous-wave optical emission spectrum from uncapped dots does not reproduce straightforwardly the dot size distributions obtained by atomic force microscopy measurements, showing an enhancement of the emission from small dots. The result is attributed to the strong dependence of the electron-hole wave-function overlap with the dot size obtained by our calculations.
Country: Inglaterra
Editor: Iop Publishing Ltd
Rights: fechado
Identifier DOI: 10.1088/0022-3727/43/4/045303
Date Issue: 2010
Appears in Collections:Unicamp - Artigos e Outros Documentos

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